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D931SH65TXPSA1
P1-P3
P4-P6
P7-P9
P10-P11
Schnelle beschaltun
gslose Diode
Fast Hard Drive
Diode
Technische Information /
technical information
D931SH
Revision:
8.
1
Sei
te/page 4/
11
Date of Publicat
ion: 2015-04-
01
Maßbild
1
2
1
: Anode/Anode
2
: Kathode/Cathode
Schnelle beschaltun
gslose Diode
Fast Hard Drive
Diode
Technische Information /
technical information
D931SH
Revision:
8.
1
Sei
te/page 5/
11
Date of Publicat
ion: 2015-04-
01
R,t
–
Werte
R
R,T-W
erte
Analytische Element
e des transienten W
ärmewiderstandes
Z
thJC
Analytical elements of tr
ansient thermal imped
ance Z
thJC
Pos. n
1
2
3
4
5
6
7
beidseitig
two-sid
ed
R
thn
[K/k
W]
3,54
3,73
1,55
0,93
0,25
τ
n
[s]
0,9
0,118
0,0282
0,00422
0,00134
anodenseitig
anode-sided
R
thn
[K/k
W]
10,6
0,39
4,62
1,16
0,63
τ
n
[s]
4,89
0,253
0,0883
0,00932
0,00185
kathodenseitig
cathode-sided
R
thn
[K/k
W]
16,87
0,24
4,26
1,3
0,93
τ
n
[s]
4,52
0,745
0,113
0,0214
0,00359
Analytische Funk
tion / Analytical function:
max
n
n=1
thn
thJC
n
-t
e
1
R
Z
b
l
a
l
c
l
0
5
10
15
20
25
0,001
0,01
0,1
1
10
100
Z
thJC
[K/kW]
t [s]
Transienter innere
r Wärmewiderstand
für DC / Transient therm
al impedance Z
thJC
= f(t)
for DC
a
: Anodenseitige K
ühlung / Anode-sided cooling
b
: Beidseitige Kühlung
/ Two-sided cooling
c
: Kathodenseiti
ge Kühlung / Cathode-sided cooling
Schnelle beschaltun
gslose Diode
Fast Hard Drive
Diode
Technische Information /
technical information
D931SH
Revision:
8.
1
Sei
te/page 6/
11
Date of Publicat
ion: 2015-04-
01
Diagramme
Diagramme
Durchlasskennlinie
typ.
max.
0
500
1000
1500
2000
2500
3000
3500
0
1
2
3
4
5
6
7
i
F
[A]
v
F
[V]
Grenzdurchlaßkennlinie
/ Limiting on
-state cha
racteristic i
F
= f(v
F
)
T
vj
= T
vj
max
P1-P3
P4-P6
P7-P9
P10-P11
D931SH65TXPSA1
Mfr. #:
Buy D931SH65TXPSA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 6.5KV 1220A
Lifecycle:
New from this manufacturer.
Delivery:
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D931SH65TXPSA1