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BCV62C,215

P1-P3P4-P6P7-P9P10-P12P13-P15
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 3 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −30 V
V
CEO
collector-emitter voltage open base - −30 V
V
EBS
emitter-base voltage V
CE
=0V - −6V
I
C
collector current - −100 mA
I
CM
peak collector current - −200 mA
I
BM
peak base current - −200 mA
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
Table 8. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
I
CBO
collector-base
cut-off current
V
CB
= −30 V; I
E
=0A - - −15 nA
V
CB
= −30 V; I
E
=0A;
T
j
= 150 °C
--−5 μA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −100 μA
100 - -
V
CE
= −5V; I
C
= −2 mA 100 - 800
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −75 −300 mV
I
C
= −100 mA;
I
B
= −5mA
- −250 −650 mV
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 4 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
[1]
- −700 - mV
I
C
= −100 mA;
I
B
= −5mA
[1]
- −850 - mV
V
BE
base-emitter voltage I
C
= −2mA; V
CE
= −5V
[2]
−600 −650 −750 mV
I
C
= −10 mA; V
CE
= −5V
[2]
--−820 mV
f
T
transition frequency V
CE
= −5V;
I
C
= −10 mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A
-4.5-pF
NF noise figure V
CE
= −5V;
I
C
= −200 μA; R
S
=2kΩ;
f = 1 kHz; B = 200 Hz
--10dB
Transistor TR2
V
EBS
emitter-base voltage V
CB
=0V; I
E
= −250 mA - - −1.5 V
V
CB
=0V; I
E
= −10 μA −400--mV
h
FE
DC current gain V
CE
= −5V; I
C
= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
Transistors TR1 and TR2
I
C1
/I
E2
current matching I
E2
= −0.5 mA;
V
CE1
= −5V;
T
amb
≤ 25 °C 0.7 - 1.3
T
amb
≤ 150 °C 0.7 - 1.3
I
E2
emitter current 2 V
CE1
= −5V
[3]
--−5mA
Table 8. Characteristics
…continued
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 5 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
V
CE
= −5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
= −5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 1. BCV62A: DC current gain as a function of
collector current; typical values
Fig 2. BCV62A: Base-emitter voltage as a function of
collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 3. BCV62A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV62A: Base-emitter saturation voltage as a
function of collector current; typical values
mgt711
0
200
300
400
500
h
FE
100
−10
−2
−10
−1
−1 −10 −10
2
−10
3
I
C
(mA)
(1)
(2)
(3)
mgt712
0
−1200
−1000
−800
−600
−400
−200
−10
−2
−10
−1
−1 −10 −10
2
−10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
mgt713
−10
4
−10
3
−10
2
−10
−10
−1
−1 −10 −10
2
−10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)(3)
mgt714
−10
−1
−1 −10 −10
2
−10
3
I
C
(mA)
0
−1200
−1000
−800
−600
−400
−200
V
BEsat
(mV)
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15

BCV62C,215

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 30V 100mA
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