OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

3N163

P1-P3P4-P5
3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94
1
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number
V
(BR)DSS
Min
(V)
V
GS(th)
(V)
r
DS(on)
Max
()
I
D(on)
Min
(mA)
C
rss
Max
(pF)
t
ON
Typ
(ns)
3N163 –40 –2 to –5 250 –5 0.7 18
3N164 –30 –2 to –5 300 –3 0.7 18
Features Benefits Applications
Ultra-Low Input Leakage: 0.02 pA Typ.
High Gate Breakdown Voltage: 125 V
Normally Off
High Input Impedance Isolation
Minimize Handling ESD Problems
High Off Isolation without Power
Ultra-High Input Impedance Amplifier
Smoke Detectors
Electrometers
Analog Switching
Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
Case
Substrate
Top View
D
G
TO-206AF
(TO-72)
1
23
4
S
Absolute Maximum Ratings (T
A
= 25C Unless Otherwise Noted)
   –40 
  
   
Continuous Drain Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 seconds) 300C. . . . . . . . .
Storage Temperature –65 to 200C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C. . . . . . . . . . . . . . . . . .
Power Dissipation
a
375 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Derate 3 mW/C above 25C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
3N163/3N164
2 Siliconix
P-37404—Rev. D, 04-Jul-94


3N163
3N164
    
    
Static
Drain-Source Breakdown Voltage V
(BR)DSS
I
D
= –10 mA, V
DS
= 0 V –70 –40 –30
Source-Drain Breakdown Voltage V
(BR)SDS
I
S
= –10 mA, V
GD
= V
BD
= 0 V –70 –40 –30
V
Gate-Threshold Voltage V
GS(th)
I
D
= –10 mA, V
GS
= V
DS
–2.5 –2 –5 –2 –5
V
Gate-Source Voltage V
GS
I
D
= –0.5 mA, V
DS
= –15 V –3.5 –3 –6.5 –2.5 –6.5
V
GS
= –40 V, V
DS
= 0 V <–1 –10
Gate Body Leakage
I
GSS
T
A
= 125C
d
–1
Gate
-
Body
Leakage
I
GSS
V
GS
= –30 V, V
DS
= 0 V <–1 –10
pA
T
A
= 125C
d
–1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –15 V, V
GS
= 0 V –8 –200 –400
Zero
-
Gate
Voltage
Drain
Current
I
DSS
T
A
= 125C
d
–20 nA
Zero Gate Voltage Source Current
I
SDS
V
GD
= V
BD
= 0 V, V
SD
= –20 V –10 –400 –800 pA
Zero
-
Gate
Voltage
Source
Current
I
SDS
T
A
= 125C
d
–25 nA
On-State Drain Current
c
I
D(on)
V
DS
= –15 V, V
GS
= –10 V –10 –5 –30
–3
–30 mA
Drain Source On Resistance
r
DS( )
V
GS
= –20 V, I
D
= –100 mA 180 250 300
W
Drain
-
Source
On
-
Resistance
r
DS(on)
T
A
= 125C
d
270
W
Dynamic
Forward Transconductance
c
g
fs
V
DS
= –15 V, I
D
= –10 mA
2.7 2 4 1 4 mS
Common-Source Output Conductance
c
g
os
S
f = 1 kHz
150 250 250 mS
Input Capacitance C
iss
V 15 V I 10 A
2.4 3.5 3.5
Output Capacitance C
oss
V
DS
= –15 V, I
D
= –10 mA
f = 1 MHz
2.5 3 3
pF
Reverse Transfer Capacitance C
rss
0.5 0.7 0.7
Switching
e
Turn On Time
t
d(on)
V
DD
=–
15 V, R
L
=
1500 W
5 12 12
Turn
-
On
Time
t
r
V
DD
=
15
V
,
R
L
=
1500
W
I
D
^ –10 mA, V
GEN
= –12 V
R
G
=50W
13 24 24
ns
Turn-Off Time t
d(off)
R
G
=
50
W
25 50 50
Notes:
a. T
A
= 25C unless otherwise noted. MRA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms duty cycle v3%.
d. This parameter not registered with JEDEC.
e. Switching time is essentially independent of operating temperature.
3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94
3
Typical Characteristics
V
GS
= –10 V
Output Characteristics
Drain-Source On-Resistance
vs. Gate-Source Voltage
Low-Level Drain-Source On-Voltage
vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
r
DS(on)
– Drain-Source On-Resistance (
– Drain-Source Voltage (V)
V
DS
– Drain Current (mA)
I
D
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–50
0 –30 –40–20–10 –50
–40
–30
–20
–10
0
V
BS
= 0 V V
GS
= –20 V
–18 V
–16 V
–14 V
–12 V
–10 V
–8 V
–6 V
Transfer Characteristics
– Drain Current (mA)
I
D
V
GS
– Gate-Source Voltage (V)
0 –12 –16 –20–8–4
–50
–40
–30
–20
–10
0
Low-Level Output Characteristics
– Drain Current (
I
D
A)m
V
DS
– Drain-Source Voltage (V)
–1000
0 –0.20.20.4 –0.4
–800
–600
–400
–200
0
200
400
600
800
1000
–5 V
–4 V
10 k
–0.1 –1–0.01 –10
1 k
100
10
125C
T
A
= 25C
100 k
0 –20
10 k
1 k
100
–10
T
A
= 125C
T
A
= 25C
2.5
2.0
1.5
1.0
0.5
0
0 –20–10
I
D
= 100 mA
V
BS
= 0 V
10 mA
1 mA
g
fs
– Forward Transconductance (
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
V
DS
= V
GS
V
BS
= 0 V
V
BS
= 0 V
–9 V
–8 V
–7 V
–6 V
W
A)m
I
D
= 0.1 mA
P1-P3P4-P5

3N163

Mfr. #:
Buy 3N163
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-3N163-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet