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3N163

P1-P3P4-P5
3N163/3N164
4 Siliconix
P-37404—Rev. D, 04-Jul-94
Typical Characteristics (Cont’d)
Capacitance vs. Gate-Source Voltage
Drain-Source Leakage Current
vs. Temperature
Common-Source Output Conductance
vs. Drain Voltage
Common-Source Output Conductance
vs. Drain Current
C (pF)
I
D
– Drain Current (mA)V
DS
– Drain-Source Voltage (V)
T
A
– Temperature (C)V
GS
– Gate-Source Voltage (V)
3.0
0 –12 –16–8–4 –20
0
0.6
1.2
1.8
2.4
100 nA
10 70 905030 110
10 nA
1 nA
100 pA
10 pA
130 150
10 k
0 –20 –25–15–10 –30
1 k
100
10
–5
1000
–0.1 –100–10–1.0
100
10
1
I
D(on)
= –10 mA
C
iss
C
oss
C
rss
I
S(off)
I
D(off)
–1 mA
– Leakage I
, I
S(off) D(off)
S)g
os
– Output Conductance ( m
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
V
DS
= –15 V
V
BS
= 0 V
f= 1 MHz
V
BS
= 0 V
f= 1 kHz
S)g
os
– Output Conductance ( m
Switching Time Test Circuit
510 W
R
L
51 W
V
IN
To Scope –V
DD
V
OUT
To Scope
–V
DD
50%
10%
90%
t
d(on)
t
d(off)
t
r
t
f
0 V
–12 V
0 V
V
IN
V
OUT
Input pulse: t
d
, t
r
< 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
t
r
< 360 ps
R
IN
= 1 MW
C
IN
= 2 pF
BW = 500 MHz
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Vishay
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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therein, which apply to these products.
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P1-P3P4-P5

3N163

Mfr. #:
Buy 3N163
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-3N163-E3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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