ADG858 Data Sheet
Rev. B | Page 4 of 16
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance, R
ON
1 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD,
I
S
= 100 mA, see Figure 16
On-Resistance Match Between Channels, ΔR
ON
0.05 Ω typ V
DD
= 2.7 V, V
S
= 0.7 V, I
S
= 100 mA
0.15 Ω max
On-Resistance Flatness, R
FL AT (ON)
0.35 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD
, I
S
= 100 mA
0.79 Ω max
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage I
S
(Off ) ±10 pA typ V
S
= 0.6 V/3.3 V, V
D
= 3.3 V/0.6 V, see Figure 17
Channel On Leakage I
D
, I
S
(On) ±10 pA typ V
S
= V
D
= 0.6 V or 3.3 V, see Figure 18
DIGITAL INPUTS
Input High Voltage, V
INH
1.35 V min
Input Low Voltage, V
INL
0.8 V max
I
INL
or I
INH
0.004 µA typ V
IN
= V
GND
or V
DD
0.05 µA max
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
1
t
ON
30 ns typ R
L
= 50 Ω, C
L
= 35 pF
50 59 ns max V
S
= 1.5 V/0 V, see Figure 19
t
OFF
9 ns typ R
L
= 50 Ω, C
L
= 35 pF
14 15 ns max V
S
= 1.5 V, see Figure 19
Break-Before-Make Time Delay, t
BBM
25 ns typ R
L
= 50 Ω, C
L
= 35 pF
11 ns min V
S1
= V
S2
= 1.5 V, see Figure 20
Charge Injection 35 pC typ V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 21
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz, see Figure 22
Channel-to-Channel Crosstalk −85 dB typ S1A to S2A/S1B to S2B/S3A to S4A/S3B to S4B,
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz, see Figure 25
−67 dB typ S1A to S1B/S2A to S2B/S3A to S3B/S4A to S4B,
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz, see Figure 24
Total Harmonic Distortion, THD + N 0.1 % R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1.5 V p-p
Insertion Loss −0.06 dB typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 23
−3 dB Bandwidth 70
R
L
= 50 Ω, C
L
= 5 pF, see Figure 23
C
S
(Off ) 25 pF typ
C
D
, C
S
(On) 75 pF typ
POWER REQUIREMENTS V
DD
= 3.6 V
I
DD
0.003 µA typ Digital inputs = 0 V or 3.6 V
1 µA max
1
Guaranteed by design, not subject to production test.
