MT4JSF12864HZ-1G6D1

DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB (x64, SR) 204-Pin DDR3 SODIMM
DRAM Operating Conditions
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jsf4c128x64hz.pdf - Rev. F 05/13
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 10: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision D)
Values are for the MT41J128M16 DDR3 SDRAM only and are computed from values specified in the 2Gb (128 Meg x 16)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
440 400 360 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
540 520 500 mA
Precharge power-down current: Slow exit I
DD2P0
48 48 48 mA
Precharge power-down current: Fast exit I
DD2P1
160 140 120 mA
Precharge quiet standby current I
DD2Q
160 140 120 mA
Precharge standby current I
DD2N
168 148 128 mA
Precharge standby ODT current I
DD2NT
260 240 220 mA
Active power-down current I
DD3P
180 160 140 mA
Active standby current I
DD3N
180 160 140 mA
Burst read operating current I
DD4R
1080 980 800 mA
Burst write operating current I
DD4W
1120 1020 840 mA
Refresh current I
DD5B
860 800 790 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
48 48 48 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
60 60 60 mA
All banks interleaved read current I
DD7
1900 1700 1500 mA
Reset current I
DD8
56 56 56 mA
1GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b05507
jsf4c128x64hz.pdf - Rev. F 05/13
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 11: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range –40 125 °C
Temperature sensor accuracy (class B) –1.0 1.0 °C
Table 12: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 ns
Start condition setup time
t
SU:STA 4.7 µs
Stop condition setup time
t
SU:STO 4.0 µs
1GB (x64, SR) 204-Pin DDR3 SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef83b05507
jsf4c128x64hz.pdf - Rev. F 05/13
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT4JSF12864HZ-1G6D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 204SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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