OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BFU760F,115

P1-P3P4-P6P7-P9P10-P12
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity RF transistor
High maximum output third-order intercept point 32 dBm at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
Ka band oscillators DRO’s
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
GPS
ZigBee
SDARS first stage LNA
LTE, cellular, UMTS
BFU760F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
BFU760F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 2 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
3. Ordering information
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 10 V
V
CEO
collector-emitter voltage open base - - 2.8 V
V
EBO
emitter-base voltage open collector - - 1.0 V
I
C
collector current - 25 70 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
- - 220 mW
h
FE
DC current gain I
C
=10mA; V
CE
=2V;
T
j
=25°C
155 330 505
C
CBS
collector-base
capacitance
V
CB
=2V; f=1MHz - 175 - fF
f
T
transition frequency I
C
=50mA; V
CE
=1V;
f=2GHz; T
amb
=25°C
-45- GHz
G
p(max)
maximum power gain I
C
=50mA; V
CE
=1V;
f=2.4GHz; T
amb
=25°C
[2]
-22- dB
NF noise figure I
C
=12mA; V
CE
=2V;
f=2.4GHz; Γ
S
= Γ
opt
-0.50- dB
IP3 third-order intercept
point
I
C
=30mA; V
CE
=2.5V;
Z
S
=Z
L
=50Ω;
f=2.4GHz; T
amb
=25°C
-32- dBm
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
12
34
mbb15
9
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU760F - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
BFU760F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 3 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
4. Marking
5. Limiting values
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 4. Marking
Type number Marking Description
BFU760F D7* * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 10 V
V
CEO
collector-emitter voltage open base - 2.8 V
V
EBO
emitter-base voltage open collector - 1.0 V
I
C
collector current - 70 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
- 220 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 270 K/W
Fig 1. Power derating curve
T
sp
(°C)
0 16012040 80
001aam862
100
150
50
200
250
P
tot
(mW)
0
P1-P3P4-P6P7-P9P10-P12

BFU760F,115

Mfr. #:
Buy BFU760F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet