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BFU760F,115

P1-P3P4-P6P7-P9P10-P12
BFU760F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 7 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
V
CE
=1V; I
C
=8mA; T
amb
=25°C. V
CE
=1V; I
C
=50mA; T
amb
=25°C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25°C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(1) f = 1.5 GHz
I
C
=12mA; V
CE
=2V; T
amb
=25°C.
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0108462
001aam868
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
f (GHz)
0108462
001aam869
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
001aam870
I
C
(mA)
0302010
0.4
0.8
1.2
NF
min
(dB)
0
(1)
(2)
(4)
(3)
f (GHz)
0108462
001aam871
0.4
0.6
0.2
0.8
1.0
NF
min
(dB)
0
BFU760F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 8 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
8. Package outline
Fig 11. Package outline SOT343F
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343
F
05-07-12
06-03-16
UNIT
A
max
mm
0.4
0.3
0.75
0.65
0.7
0.5
2.2
1.8
0.25
0.10
1.35
1.15
0.48
0.38
2.2
2.0
b
p
DIMENSIONS (mm are the original dimensions)
P
lastic surface-mounted flat pack package; reverse pinning; 4 leads
b
1
c D E e e
1
H
E
1.151.3
L
p
w y
0.10.2
0 1 2 mm
scale
detail X
L
p
c
A
E
X
H
E
D
A
y
b
p
b
1
e
1
e
wA
M
wA
M
12
34
BFU760F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 9 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
DBS Direct Broadcast Satellite
DC Direct Current
DRO Dielectric Resonator Oscillator
GPS Global Positioning System
Ka Kurtz above
LNA Low Noise Amplifier
LNB Low Noise Block
LTE Long Term Evolution
NPN Negative-Positive-Negative
RF Radio Frequency
SDARS Satellite Digital Audio Radio Service
UMTS Universal Mobile Telecommunications System
WiMAX Worldwide Interoperability for Microwave Access
WLAN Wireless Local Area Network
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU760F v.1 20110429 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU760F,115

Mfr. #:
Buy BFU760F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lifecycle:
New from this manufacturer.
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