MC10H016FNR2G

MC10H016
www.onsemi.com
4
PACKAGE DIMENSIONS
20 LEAD PLLC
CASE 77502
ISSUE F
M
N
L
Y BRK
W
V
D
D
S
L-M
M
0.007 (0.180) N
S
T
S
L-M
M
0.007 (0.180) N
S
T
S
L-M
S
0.010 (0.250) N
S
T
X
G1
B
U
Z
VIEW DD
20 1
S
L-M
M
0.007 (0.180) N
S
T
S
L-M
M
0.007 (0.180) N
S
T
S
L-M
S
0.010 (0.250) N
S
T
C
G
VIEW S
E
J
R
Z
A
0.004 (0.100)
T
SEATING
PLANE
S
L-M
M
0.007 (0.180) N
S
T
S
L-M
M
0.007 (0.180) N
S
T
H
VIEW S
K
K1
F
G1
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M,
1982.
2. DIMENSIONS IN INCHES.
3. DATUMS L, M, AND N DETERMINED WHERE TOP
OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD
PARTING LINE.
4. DIMENSION G1, TRUE POSITION TO BE MEASURED AT
DATUM T, SEATING PLANE.
5. DIMENSIONS R AND U DO NOT INCLUDE MOLD FLASH.
ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE.
6. DIMENSIONS IN THE PACKAGE TOP MAY BE SMALLER
THAN THE PACKAGE BOTTOM BY UP TO 0.012 (0.300).
DIMENSIONS R AND U ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE
BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY
MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION
TO BE GREATER THAN 0.037 (0.940). THE DAMBAR
INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO
BE SMALLER THAN 0.025 (0.635).
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.385 0.395 9.78 10.03
B 0.385 0.395 9.78 10.03
C 0.165 0.180 4.20 4.57
E 0.090 0.110 2.29 2.79
F 0.013 0.021 0.33 0.53
G 0.050 BSC 1.27 BSC
H 0.026 0.032 0.66 0.81
J 0.020 −−− 0.51 −−−
K 0.025 −−− 0.64 −−−
R 0.350 0.356 8.89 9.04
U 0.350 0.356 8.89 9.04
V 0.042 0.048 1.07 1.21
W 0.042 0.048 1.07 1.21
X 0.042 0.056 1.07 1.42
Y −−− 0.020 −−− 0.50
Z 2 10 2 10
G1 0.310 0.330 7.88 8.38
K1 0.040 −−− 1.02 −−−
____
MC10H016
www.onsemi.com
5
PACKAGE DIMENSIONS
PDIP16
CASE 64808
ISSUE V
STYLE 1:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
STYLE 2:
PIN 1. COMMON DRAIN
2. COMMON DRAIN
3. COMMON DRAIN
4. COMMON DRAIN
5. COMMON DRAIN
6. COMMON DRAIN
7. COMMON DRAIN
8. COMMON DRAIN
9. GATE
10. SOURCE
11. GATE
12. SOURCE
13. GATE
14. SOURCE
15. GATE
16. SOURCE
18
16 9
b2
NOTE 8
D
A
TOP VIEW
E1
B
b
L
A1
A
C
SEATING
PLANE
0.010 CA
SIDE VIEW
M
16X
D1
e
A2
NOTE 3
M
B
M
eB
E
END VIEW
END VIEW
WITH LEADS CONSTRAINED
DIM MIN MAX
INCHES
A −−−− 0.210
A1 0.015 −−−−
b 0.014 0.022
C 0.008 0.014
D 0.735 0.775
D1 0.005 −−−−
e 0.100 BSC
E 0.300 0.325
M −−−− 10
−−− 5.33
0.38 −−−
0.35 0.56
0.20 0.36
18.67 19.69
0.13 −−−
2.54 BSC
7.62 8.26
−−− 10
MIN MAX
MILLIMETERS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
E1 0.240 0.280 6.10 7.11
b2
eB −−−− 0.430 −−− 10.92
0.060 TYP 1.52 TYP
c
A2 0.115 0.195 2.92 4.95
L 0.115 0.150 2.92 3.81
°°
H
NOTE 5
NOTE 6
M
e/2
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MC10H016/D
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MC10H016FNR2G

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ON Semiconductor
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Counter ICs 4-Bit Binary
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