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PD85025STR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
June 2011 Doc ID 13593 Rev 3 1/16
16
PD85025-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 25 W with 15.7 dB gain @ 870 MHz /
13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive
Description
The PD85025-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85025-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85025-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order codes Package Packing
PD85025-E PowerSO-10RF (formed lead)
Tube
PD85025S-E PowerSO-10RF (straight lead)
PD85025TR-E PowerSO-10RF (formed lead)
Tape and reel
PD85025STR-E PowerSO-10RF (straight lead)
www.st.com
Contents PD85025-E
2/16 Doc ID 13593 Rev 3
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.4 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PD85025-E Electrical data
Doc ID 13593 Rev 3 3/16
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 7 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 79 W
T
J
Max. operating junction temperature 165 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.2 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PD85025STR-E

Mfr. #:
Buy PD85025STR-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Lifecycle:
New from this manufacturer.
Delivery:
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