Electrical characteristics PD85025-E
4/16 Doc ID 13593 Rev 3
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
2.4 Moisture sensitivity level
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V V
DS
= 25 V 1 µA
I
GSS
V
GS
= 5 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 300 mA 3.2 4.8 V
V
DS(ON)
V
GS
= 10 V I
D
= 1 A 0.27 0.31 V
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 55 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 40 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 1.5 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P3dB V
DD
= 13.6 V, I
DQ
= 300 mA f = 870 MHz 25 30 - W
G
P
V
DD
= 13.6 V, I
DQ
= 300 mA, P
OUT
= 10 W, f = 870 MHz 15 17.3 - dB
h
D
V
DD
= 13.6 V, I
DQ
= 300 mA, P
OUT
= P3dB, f = 870 MHz 60 66 - %
Load
mismatch
V
DD
= 17 V, I
DQ
= 300 mA, P
OUT
= 45 W, f = 870 MHz
All phase angles
20:1 - VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
Table 7. Moisture sensitivity level
Test conditions Rating
J-STD-020B MSL 3
PD85025-E Impedance
Doc ID 13593 Rev 3 5/16
3 Impedance
Figure 2. Current conventions
Table 8. Impedance data
Frequency (MHz) Z
IN
()Z
DL
()
870 MHz 0.21 +j 1.82 1.23 -j 0.98
Typical performance PD85025-E
6/16 Doc ID 13593 Rev 3
4 Typical performance
Figure 3. Capacitances vs drain voltage
Figure 4. DC output characteristics Figure 5. DC output characteristics
0
20
40
60
80
100
120
01020304050
VDS (V)
Capacitances (pF)
Coss Cr ss Cis s
p
0
1
2
3
4
5
6
0510
VDS[V]
Vgs = 4.0V Vgs = 4.5V
Vgs = 5.0V Vgs = 5.5V
Vgs = 6.0V
Tamb = - 40 °C
ID[A]
0
1
2
3
4
5
6
0510
VDS[V]
Vgs = 4.0V Vgs = 4.5V
Vgs = 5.0V Vgs = 5.5V
Vgs = 6.0V
Tamb = + 20 °C
ID[A]

PD85025STR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER R.F. N-Ch Trans
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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