NXP Semiconductors
BT151X-650R
SCR
BT151X-650R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 5 / 11
003aaj933
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
t
p
T
P
t
T
δ =
(2)
(1)
(1) Without heatsink compound
(2) With heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from anode to external heatsink;
f = 1 MHz; T
h
= 25 °C
- 10 - pF
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 2 15 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 8 - 10 40 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 7 20 mA
V
T
on-state voltage I
T
= 23 A; T
j
= 25 °C; Fig. 10 - 1.4 1.75 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.6 1 VV
GT
gate trigger voltage
V
D
= 650 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V