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BT151X-650R,127

P1-P3P4-P6P7-P9P10-P12
NXP Semiconductors
BT151X-650R
SCR
BT151X-650R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 6 / 11
Symbol Parameter Conditions Min Typ Max Unit
I
D
off-state current V
D
= 650 V; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
= 650 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
V
DM
= 436 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform; Fig. 12
200 1000 - V/µsdV
D
/dt rate of rise of off-state
voltage
V
DM
= 436 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 12
50 130 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
= 650 V; I
G
= 100 mA;
dI
G
/dt = 5 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 436 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 50 V/µs; R
GK
= 100 Ω; (V
DM
= 67%
of V
DRM
)
- 70 - µs
T
j
(°C)
- 50 1501000 50
001aaa952
1
2
3
0
I
GT
I
GT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
- 50 1501000 50
001aaa951
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
NXP Semiconductors
BT151X-650R
SCR
BT151X-650R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 7 / 11
T
j
(°C)
- 50 1501000 50
001aaa950
1
2
3
I
H
I
H(25°C)
0
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 21.50.5 1
001aaa959
10
20
30
I
T
(A)
0
(3)(2)(1)
V
o
= 1.06 V; R
s
= 0.0304 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
T
j
(°C)
- 50 1501000 50
001aaa953
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Fig. 11. Normalized gate trigger voltage as a function of
junction temperature
001aaa949
10
3
10
2
10
4
dV
D
/dt
(V/µs)
10
T
j
(°C)
0 15010050
(2)
(1)
(1) R
GK
= 100 Ω;
(2) gate open circuit
Fig. 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
NXP Semiconductors
BT151X-650R
SCR
BT151X-650R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 8 / 11
11. Package outline
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT186A 3-lead TO-220F
0 5 10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
A
A
1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
D
D
1
L
L
2
L
1
b
1
b
2
e
1
e
b
w M
1 2 3
q
E
P
T
UNIT
D
b
1
D
1
e qQPLc
L
2
(1)
max.
e
1
A
5.08
3
mm
4.6
4.0
A
1
2.9
2.5
b
0.9
0.7
1.1
0.9
b
2
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5 0.4
L
1
3.30
2.79
j
2.7
1.7
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
02-04-09
06-02-14
mounting
base
Fig. 13. Package outline TO-220F (SOT186A)
P1-P3P4-P6P7-P9P10-P12

BT151X-650R,127

Mfr. #:
Buy BT151X-650R,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs RAIL SCR
Lifecycle:
New from this manufacturer.
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