SI5515DC-T1-E3 Datasheet SI5515DC-T1-E3, SI5515DC-T1-GE3 | P1-P3

Vishay Siliconix

Si5515DC

Document Number: 72221

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

1

Complementary 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs

• Ultra Low R

DS(on)

and Excellent Power

Handling In Compact Footprint

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switching for Portable Devices

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

N-Channel 20

0.040 at V

GS

= 4.5 V

5.9

0.045 at V

GS

= 2.5 V

5.6

0.052 at V

GS

= 1.8 V

5.2

P-Channel - 20

0.086 at V

GS

= - 4.5 V

- 4.1

0.121 at V

GS

= - 2.5 V

- 3.4

0.171 at V

GS

= - 1.8 V

- 2.9

Bottom View

1206-8 ChipFET

®

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

1

Marking Code

EC XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5515DC-T1-E3 (Lead (Pb)-free)

Si5515DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

1

G

1

S

1

N-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol

N-Channel P-Channel

Unit 5 s Steady State 5 s Steady State

Drain-Source Voltage

V

DS

20 - 20

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

5.9 4.4 - 4.1 - 3

A

T

A

= 85 °C

4.2 3.1 - 2.9 - 2.2

Pulsed Drain Current

I

DM

20 - 15

Continuous Source Current (Diode Conduction)

a

I

S

1.8 0.9 - 1.8 - 0.9

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2.1 1.1 2.1 1.1

W

T

A

= 85 °C

1.1 0.6 1.1 0.6

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

50 60

°C/W

Steady State 90 110

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

30 40

www.vishay.com

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Document Number: 72221

S10-0547-Rev. C, 08-Mar-10

Vishay Siliconix

Si5515DC

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 0.4 1.0

V

DS

= V

GS

, I

D

= - 250 µA

P-Ch - 0.4 - 1.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

N-Ch ± 100

nA

P-Ch ± 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

N-Ch 1

µA

V

DS

= - 20 V, V

GS

= 0 V

P-Ch - 1

V

DS

= 20 V, V

GS

= 0 V, T

J

= 85 °C

N-Ch 5

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 85 °C

P-Ch - 5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

N-Ch 20

A

V

DS

≤ - 5 V, V

GS

= - 4.5 V

P-Ch - 15

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 4.4 A

N-Ch 0.032 0.040

Ω

V

GS

= - 4.5 V, I

D

= - 3 A

P-Ch 0.069 0.086

V

GS

= 2.5 V, I

D

= 4.1 A

N-Ch 0.036 0.045

V

GS

= - 2.5 V, I

D

= - 2.5 A

P-Ch 0.097 0.121

V

GS

= 1.8 V, I

D

= 1.9 A

N-Ch 0.042 0.052

V

GS

= - 1.8 V, I

D

= - 0.6 A

P-Ch 0.137 0.171

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 4.4 A

N-Ch 22

S

V

DS

= - 10 V, I

D

= - 3 A

P-Ch 8

Diode Forward Voltage

a

V

SD

I

S

= 0.9 A, V

GS

= 0 V

N-Ch 0.8 1.2

V

I

S

= - 0.9 A, V

GS

= 0 V

P-Ch - 0.8 - 1.2

Dynamic

b

Total Gate Charge

Q

g

N-Channel

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 4.4 A

P-Channel

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 3 A

N-Ch 5 7.5

nC

P-Ch 5.5 8.5

Gate-Source Charge

Q

gs

N-Ch 0.85

P-Ch 0.91

Gate-Drain Charge

Q

gd

N-Ch 1

P-Ch 1.6

Tur n - O n D e l ay Time

t

d(on)

N-Channel

V

DD

= 10 V, R

L

= 10 Ω

I

D

≅ 1 A, V

GEN

= 4.5 V, R

g

= 6 Ω

P-Channel

V

DD

= - 10 V, R

L

= 10 Ω

I

D

≅ - 1 A, V

GEN

= - 4.5 V, R

g

= 6 Ω

N-Ch 20 30

ns

P-Ch 18 30

Rise Time

t

r

N-Ch 36 55

P-Ch 32 50

Turn-Off Delay Time

t

d(off)

N-Ch 30 45

P-Ch 42 65

Fall Time

t

f

N-Ch 12 20

P-Ch 26 40

Source-Drain Reverse Recovery Time

t

rr

I

F

= 0.9 A, dI/dt = 100 A/µs

N-Ch 45 90

I

F

= - 0.9 A, dI/dt = 100 A/µs

P-Ch 30 60

Document Number: 72221

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

3

Vishay Siliconix

Si5515DC

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

012345

V

GS

= 5 V thru 2 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1 V

1.5 V

- On-Resistance (Ω)R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

048121620

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 4.5 V

V

GS

= 2.5 V

0

1

2

3

4

5

0123456

V

DS

= 10 V

I

D

= 4.4 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0 0.4 0.8 1.2 1.6 2.0

T

C

= - 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

100

200

300

400

500

600

700

800

048121620

V

DS

- Drain-to-Source Voltage

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 4.4 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

SI5515DC-T1-E3

SI5515DC-T1-E3

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