SI7945DP-T1-E3 Datasheet SI7945DP-T1-GE3, SI7945DP-T1-E3 | P1-P3

Vishay Siliconix

Si7945DP

Document Number: 72090

S09-0227-Rev. D, 09-Feb-09

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

- 30

0.020 at V

GS

= - 10 V

- 10.9

49

0.031 at V

GS

= - 4.5 V

- 8.8

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK SO-8

Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free)

Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

G

1

D

1

P-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

- 30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

- 10.9 - 7.0

A

T

A

= 70 °C

- 8.7 - 5.6

Pulsed Drain Current

I

DM

- 30

Continuous Source Current (Diode Conduction)

a

I

S

- 2.9 - 1.2

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

3.5 1.4

W

T

A

= 70 °C

2.2 0.9

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

26 35

°C/WSteady State 60 85

Maximum Junction-to-Case (Drain) Steady State

R

thJC

2.5 3.1

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFETs

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

APPLICATIONS

• Battery and Load Switching

- Notebook PCs

- Game Systems

- Set-Top Box

www.vishay.com

2

Document Number: 72090

S09-0227-Rev. D, 09-Feb-09

Vishay Siliconix

Si7945DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1.0 - 3.0 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 55 °C

- 5

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 10 V

- 30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 10.9 A

0.016 0.020

Ω

V

GS

= - 4.5 V, I

D

= - 8.8 A

0.025 0.031

Forward Transconductance

a

g

fs

V

DS

= - 15 V, I

D

= - 10.9 A

26 S

Diode Forward Voltage

a

V

SD

I

S

= - 2.9 A, V

GS

= 0 V

- 0.8 - 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 10.9 A

49 74

nCGate-Source Charge

Q

gs

7.3

Gate-Drain Charge

Q

gd

13

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 15 V, R

L

= 15 Ω

I

D

≅ - 1 A, V

GEN

= - 10 V, R

g

= 6 Ω

15 25

ns

Rise Time

t

r

15 25

Turn-Off Delay Time

t

d(off)

130 200

Fall Time

t

f

80 120

Source-Drain Reverse Recovery Time

t

rr

I

F

= - 2.9 A, dI/dt = 100 A/µs

85 130

Output Characteristics

0

6

12

18

24

30

012345

V

GS

= 10 V thru 4 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

Transfer Characteristics

0

6

12

18

24

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 72090

S09-0227-Rev. D, 09-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7945DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.00

0.01

0.02

0.03

0.04

0.05

0 6 12 18 24 30

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 1020304050

V

DS

= 15 V

I

D

= 10.9 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

J

= 25 °C

30

10

1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

T

J

= 150 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

3500

0 6 12 18 24 30

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 2 5 5 0 7 5 100 125 150

V

GS

= 10 V

I

D

= 10.9 A

T

J

- Junction T emperature ( °C)

R

DS ( on)

On-Resistance

(Normalized)

0.00

0.01

0.02

0.03

0.04

0.05

0 2468 10

I

D

= 10.9 A

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source V oltage (V)

SI7945DP-T1-E3

SI7945DP-T1-E3

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