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SI7945DP-T1-E3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
Vishay Siliconix
Si7945DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
-
Single Pulse Power, Junction-to-Ambient
0
30
40
10
20
Power (W)
Time (s)
0.1 10001000.01 101
Safe Operating Area
V
DS
- Drain-to-Source V oltage (V)
100
1
0.1 1 1 0 100
0.01
10
T
A
= 25
°C
Single Pulse
- Drain Current (A) I
D
P(t) = 10
DC
0.1
I
D( on)
Limited
Limited by R
DS(on)
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
DM
Limited
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 1 0 60010
-
1
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 60 °C/W
3. T
JM
-
T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
5
Vishay Siliconix
Si7945DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72090
.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
Document Number: 71655 www.vishay.com
Revison: 15-Feb-10 1
Package Information
Vishay Siliconix
PowerPAK
®
SO-8, (SINGLE/DUAL)
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0.00 - 0.05 0.000 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4
0.57 TYP. 0.0225 TYP.
D5
3.98 TYP. 0.157 TYP.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4
0.75 TYP. 0.030 TYP.
e 1.27 BSC 0.050 BSC
K
1.27 TYP. 0.050 TYP.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
θ 0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M
0.125 TYP. 0.005 TYP.
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
3.
Dimensions exclusive of mold flash and cutting burrs.
1.
Notes
2
Inch will govern.
Dimensions exclusive of mold gate burrs.
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D
D1
D2
c
θ
A
θ
E1
θ
D1
E2
D2
e
b
1
2
3
4
H
4
3
2
1
θ
1
2
3
4
b
L
D2
D3(2x)
Z
A1
K1
K
D
E
W
L1
D5
E3
D4
E4
E4
K
L
H
E2
D4
D5
M
E3
0.150 ± 0.008
2
2
P1-P3P4-P6P7-P9P10-P12

SI7945DP-T1-E3

Mfr. #:
Buy SI7945DP-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET DUAL P-CH 30V (D-S)
Lifecycle:
New from this manufacturer.
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