April 2008 Rev 9 1/16/
16
STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 , 20 A D
2
PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Tight process control and high manufacturing
yields
Application
Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max
R
DS(on)
* Qg I
D
STB20NM50FD
STF20NM50FD
STP20NM50FD
500 V
500 V
500 V
< 0.25
< 0.25
< 0.25
8.36 * nC
8.36 * nC
8.36 * nC
20 A
20 A
20 A
1
2
3
1
2
3
1
3
TO-220FP
TO-220
D²PAK
Table 1. Device summary
Order codes Marking Package Packaging
STB20NM50FD B20NM50FD D²PAK Tape and reel
STF20NM50FD F20NM50FD TO-220FP Tube
STP20NM50FD P20NM50FD TO-220 Tube
www.st.com
Contents STB20NM50FD - STF20NM50FD - STP20NM50FD
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical ratings
3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK
TO-220
TO-220FP
V
DS
Drain-source voltage (V
GS
=0)
500 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C
20
20
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100 °C
14
14
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 80
80
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
192 45 W
dv/dt
(3)
3. I
SD
20 A, di/dt 200 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 20 V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T
C
=25 °C)
-- 2500 V
T
stg
Storage temperature -65 to 150 °C
T
j
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter TO-220 D²PAK TO-220FP Unit
R
thj-case
Thermal resistance junction-case max 0.65 2.8 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 -- 62.5 °C/W
R
thj-pcb
Thermal resistance junction-pcb max -- 30 -- °C/W
T
l
Maximum lead temperature for
soldering purposes
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
10 A
E
AS
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 35 V)
700 mJ

STP20NM50FD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 Volt 20 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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