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STP20NM50FD

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD
4/16
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
500 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,@125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 30 V
± 100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
345V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 10 A
0.22 0.25 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max
,
I
D
= 10 A
9S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f =1 MHz,
V
GS
= 0
1380
290
40
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0, V
DS
= 0 to 400 V
130 pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
2.8 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 20 A
V
GS
= 10 V
(see Figure 16)
38
18
10
53 nC
nC
nC
STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics
5/16
Table 7. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 250 V, I
D
= 10 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15)
22
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15)
6
15
30
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 20 A, V
GS
=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20 A, di/dt =100 A/µs,
V
DD
= 60 V, T
J
=150 °C
(see Figure 17)
245
2
16
ns
nC
A
Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD
6/16
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STP20NM50FD

Mfr. #:
Buy STP20NM50FD
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 Volt 20 Amp
Lifecycle:
New from this manufacturer.
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