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MD7IC2012GNR1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
10
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2012NR1 MD7IC2012GNR1
V
DD
= 28 Vdc, I
DQ1A
= 12 mA, I
DQ2A
= 80 mA, CW
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2110 48.7 + j29.5 46.6 − j28.5 8.66 − j3.87 28.2 40.0 10.0 50.8 −5.3
2140 46.8 + j28.4 43.5 − j25.5 7.73 − j3.91 28.8 40.0 10.0 52.7 −7.2
2170 44.5 + j20.1 42.5 − j22.4 7.57 − j4.37 29.0 40.0 10.0 52.7 −6.9
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2110 48.7 + j29.5 46.3 + j26.5 8.66 − j3.87 26.2 40.7 11.8 51.6 −7.9
2140 46.8 + j28.4 43.9 − j22.5 9.01 − j4.25 26.4 40.7 11.8 50.8 −9.4
2170 44.5 + j20.1 42.9 − j19.4 8.73 − j4.51 26.6 40.7 11.8 51.2 −9.2
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Figure 12. Load Pull Performance — Maximum Power Tuning
V
DD
= 28 Vdc, I
DQ1A
= 12 mA, I
DQ2A
= 80 mA, CW
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Power Added Efficiency
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2110 48.7 + j29.5 43.2 − j34.5 4.39 − j1.83 30.0 38.8 7.5 57.7 −12
2140 46.8 + j28.4 40.9 − j30.0 4.39 − j2.52 30.4 38.9 7.7 57.2 −13
2170 44.5 + j20.1 39.6 − j25.9 4.69 − j2.49 30.5 38.9 7.8 56.9 −12
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Power Added Efficiency
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
2110 48.7 + j29.5 44.3 − j30.6 5.17 − j2.00 27.7 39.7 9.4 56.5 −12
2140 46.8 + j28.4 41.8 − j25.9 5.53 − j2.22 27.9 39.8 9.6 56.1 −13
2170 44.5 + j20.1 40.2 − j23.7 4.69 − j2.49 28.4 39.4 8.7 55.7 −14
(1) Load impedance for optimum P1dB efficiency (2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Figure 13. Load Pull Performance — Maximum Power Added Efficiency Tuning
Device
Under
Test
Output Load Pull
Tuner and
Test Circuit
Z
in
Z
load
MD7IC2012NR1 MD7IC2012GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
V
DD
= 28 Vdc, I
DQ1A
= 12 mA, I
DQ2A
= 80 mA, CW
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
1805 61.8 − j5.85 61.6 + j7.80 8.04 − j0.206 29.6 40.0 10.0 54.7 −11
1840 73.7 − j4.41 70.3 + j1.44 8.01 − j0.273 29.8 40.0 10.0 55.9 −7.6
1880 73.3 + 8.94 74.5 − j7.06 8.65 − j1.23 29.2 40.0 10.0 53.8 −6.9
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Output Power
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
1805 61.8 − j5.85 61.7 + j5.98 8.65 − j0.359 27.4 40.7 11.7 55.4 −18
1840 73.7 − j4.41 67.7 − j0.606 9.34 − j0.874 27.3 40.7 11.7 54.7 −13
1880 73.3 + j8.94 72.8 − j7.46 8.65 − j1.23 27.2 40.8 12.0 55.5 −10
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Figure 14. Load Pull Performance — Maximum Power Tuning
V
DD
= 28 Vdc, I
DQ1A
= 12 mA, I
DQ2A
= 80 mA, CW
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Power Added Efficiency
P1dB
Z
load
(1)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
1805 61.8 − j5.85 69.9 + j14.4 5.10 + j2.07 31.4 38.9 7.8 60.8 −13
1840 73.7 − j4.41 81.0 + j0.271 5.52 + j2.11 31.6 38.8 7.6 60.3 −9.1
1880 73.3 + j8.94 87.3 − j10.7 4.69 + j0.912 31.0 38.9 7.8 61.1 −10
f
(MHz)
Z
source
(W)
Z
in
(W)
Max Power Added Efficiency
P3dB
Z
load
(2)
(W)
Gain (dB) (dBm) (W)
h
D
(%)
AM/PM
(5)
1805 61.8 - j5.85 68.1 + j8.57 5.05 - j0.32 29.3 39.6 9.3 61.4 -15
1840 73.7 - j4.41 76.4 - j1.31 5.52 + j2.11 29.6 39.5 9.3 61.3 -11
1880 73.3 + j8.94 79.4 - j10.8 5.43 + j1.07 28.8 39.8 9.3 61.4 -12
(1) Load impedance for optimum P1dB efficiency (2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Note: Measurement made on a per side basis.
Figure 15. Load Pull Performance — Maximum Power Added Efficiency Tuning
Device
Under
Test
Output Load Pull
Tuner and
Test Circuit
Z
in
Z
load
12
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2012NR1 MD7IC2012GNR1
PACKAGE DIMENSIONS
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MD7IC2012GNR1

Mfr. #:
Buy MD7IC2012GNR1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7IC 2GHZ12W TO270WB14G
Lifecycle:
New from this manufacturer.
Delivery:
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