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MD7IC2012GNR1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
MD7IC2012NR1 MD7IC2012GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805−2170 MHz
1
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Single−Carrier W−CDMA Power Gain,
Power Added Efficiency and ACPR versus Output Power
-10
-20
29
35
0
60
50
40
30
20
PAE, POWER ADDED EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
34
33
10 20
10
-60
ACPR (dBc)
32
31
30
0
-30
-40
-50
Figure 8. Broadband Frequency Response
18
42
1450
f, FREQUENCY (MHz)
V
DD
= 28 Vdc
I
DQ1A
= I
DQ1B
= 20 mA
I
DQ2A
= I
DQ2B
= 70 mA
P
in
= 0 dBm
34
30
26
1600
GAIN (dB)
38
Gain
1750 1900 2050 2200 2350 2500 2650
22
2200 MHz
2000 MHz
PAE
1800 MHz
2200 MHz
2000 MHz
1800 MHz
2000 MHz
1800 MHz
2200 MHz
V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA
Single-Carrier W-CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
8
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2012NR1 MD7IC2012GNR1
W−CDMA TEST SIGNAL
0.0001
100
0
PEAK-TO-AVERAGE (dB)
Figure 9. CCDF W−CDMA IQ Magnitude
Clipping, Single−Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.21.8 5.43.60-1.8-3.6-5.4-9 9
f, FREQUENCY (MHz)
Figure 10. Single−Carrier W−CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13579
MD7IC2012NR1 MD7IC2012GNR1
9
RF Device Data
Freescale Semiconductor, Inc.
V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA, P
out
= 1.3 W Avg.
f
MHz
Z
in
W
Z
load
W
1800 73.3 + j2.21 7.94 − j1.22
1850 82.5 − j7.53 8.26 − j0.97
1900 80.1 − j27.0 8.40 − j1.13
1950 73.8 − j29.4 8.55 − j2.03
2000 64.6 − j33.8 8.67 − j2.62
2050 55.8 − j28.6 8.85 − j2.62
2100 50.5 − j27.2 8.64 − j2.79
2150 50.5 − j27.2 8.43 − j2.89
2200 45.7 − j19.8 8.05 − j2.95
Z
in
= Device input impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Figure 11. Series Equivalent Input and Load Impedance — 1805−2170 MHz
Device
Under
Test
Output
Matching
Network
Z
in
Z
load
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MD7IC2012GNR1

Mfr. #:
Buy MD7IC2012GNR1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7IC 2GHZ12W TO270WB14G
Lifecycle:
New from this manufacturer.
Delivery:
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