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BYC8X-600,127

P1-P3P4-P6P7-P9P10-P10
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC8X-600
Hyperfast rectifier diode, low switching loss
Rev. 02 — 13 March 2009 Product data sheet
1. Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Low reverse recovery current and low
thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak
reverse voltage
- - 600 V
I
F(AV)
average forward
current
square-wave pulse; δ = 0.5;
T
h
=59°C; see Figure 1;
see Figure 2
--8A
Dynamic characteristics
t
rr
reverse recovery
time
I
F
=8A; V
R
=400V;
dI
F
/dt = 500 A/µs;
T
j
= 25 °C; see Figure 5
-19-ns
Static characteristics
V
F
forward voltage I
F
=8A; T
j
=150°C; see
Figure 4
- 1.4 1.85 V
BYC8X-600_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 March 2009 2 of 9
NXP Semiconductors
BYC8X-600
Hyperfast rectifier diode, low switching loss
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD113
(TO-220F)
2 A anode
mb n.c. mounting base; isolated
21
mb
A
001aaa020
K
Table 3. Ordering information
Type number Package
Name Description Version
BYC8X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
SOD113
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-600V
V
RWM
crest working reverse
voltage
-600V
I
F(AV)
average forward
current
square-wave pulse; δ =0.5; T
h
= 59 °C; see Figure
1; see Figure 2
-8A
I
FRM
repetitive peak forward
current
square-wave pulse; δ = 0.5; t
p
= 25 µs; T
h
=59°C - 16 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; sine-wave pulse; T
j(init)
=25°C - 80 A
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
=25°C - 88 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
P1-P3P4-P6P7-P9P10-P10

BYC8X-600,127

Mfr. #:
Buy BYC8X-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 8A
Lifecycle:
New from this manufacturer.
Delivery:
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