BYC8X-600,127

BYC8X-600_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 March 2009 3 of 9
NXP Semiconductors
BYC8X-600
Hyperfast rectifier diode, low switching loss
5. Thermal characteristics
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
003aab471
0
4
8
12
16
20
02468
I
F(AV)
(A)
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
003aab472
0
5
10
15
20
25
30
04812
I
F(AV)
(A)
P
tot
(W)
δ
=1
0.5
0.2
0.1
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3 --4.8K/W
R
th(j-a)
thermal resistance from
junction to ambient free
air
-55-K/W
Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width
001aaf045
1
10
1
10
Z
th(j-h)
(K/W)
10
3
10
2
t
p
(s)
10
6
10110
1
10
5
10
3
10
2
10
4
t
p
t
p
T
P
t
T
δ =
BYC8X-600_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 March 2009 4 of 9
NXP Semiconductors
BYC8X-600
Hyperfast rectifier diode, low switching loss
6. Isolation characteristics
7. Characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage f = 1 MHz; RH = 65 %; between all pins
and external heatsink
--2500V
C
isol
isolation capacitance from cathode to external heatsink - 10 - pF
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
=8A; T
j
= 150 °C; see Figure 4 - 1.4 1.85 V
I
F
=8A; T
j
=2C - 2 2.9 V
I
F
=16A; T
j
= 150 °C - 1.7 2.3 V
I
R
reverse current V
R
=500V; T
j
= 100 °C - 1.1 3 mA
V
R
= 600 V - 9 150 µA
Dynamic characteristics
Q
r
recovered charge I
F
=1A; dI
F
/dt = 100 A/µs - 12 - nC
t
rr
reverse recovery time I
F
=8A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
-3240ns
I
F
=1A; V
R
=30V; dI
F
/dt = 50 A/µs;
T
j
=2C
-3052ns
I
F
=8A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
=2C; see Figure 5
-19-ns
I
RM
peak reverse recovery
current
I
F
=10A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
-9.512A
I
F
=8A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C
-1.55.5A
V
FR
forward recovery
voltage
I
F
=10A; dI
F
/dt = 100 A/µs; T
j
=2C;
see Figure 6
-810V
BYC8X-600_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 13 March 2009 5 of 9
NXP Semiconductors
BYC8X-600
Hyperfast rectifier diode, low switching loss
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
Fig 6. Forward recovery definitions
003aac976
0
4
8
12
16
20
01234
V
F
(V)
I
F
(A)
(1) (2) (3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FRM
V
F
I
F
V
F

BYC8X-600,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 8A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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