OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PBSS5112PAP,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5112PAP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 12 / 17
aaa-005727
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-005728
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values
NXP Semiconductors
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5112PAP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 13 / 17
8. Test information
Fig. 18. BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 19. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PBSS5112PAP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 14 / 17
9. Package outline
10-05-31Dimensions in mm
0.04
max
0.65
max
0.77
0.57
(2×)
0.54
0.44
(2×)
2.1
1.9
2.1
1.9
1.1
0.9
0.3
0.2
0.65
(4×)
0.35
0.25
(6×)
43
1 6
Fig. 20. Package outline DFN2020-6 (SOT1118)
10. Soldering
sot1118_fr
Dimensions in mm
solder paste
solder resist
occupied area
solder lands
0.49 0.49
0.650.65
0.875
0.875
2.25
0.35
(6×)
0.3
(6×)
0.4
(6×)
0.45
(6×)
0.72
(2×)
0.82
(2×)
1.05
(2×)
1.15
(2×)
2.1
Fig. 21. Reflow soldering footprint for DFN2020-6 (SOT1118)
11. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBSS5112PAP v.1 20121130 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PBSS5112PAP,115

Mfr. #:
Buy PBSS5112PAP,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet