PBSS5112PAP,115

Mfr. #:: PBSS5112PAP,115
Manufacturer:: Nexperia
Description:: Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor
Lifecycle:: New from this manufacturer.
Datasheet:: PBSS5112PAP,115 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: PBSS5112PAP,115 Datasheet PBSS5112PAP,115 Datasheet (P4-P6)PBSS5112PAP,115 Datasheet (P7-P9)PBSS5112PAP,115 Datasheet (P10-P12)PBSS5112PAP,115 Datasheet (P13-P15)PBSS5112PAP,115 Datasheet (P16-P18)
ECAD Model:
More Information:: PBSS5112PAP,115 more Information

Product Attribute
Attribute Value

Manufacturer:: Nexperia

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: DFN-2020-6

Transistor Polarity:: PNP

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: - 120 V

Collector- Base Voltage VCBO:: - 120 V

Emitter- Base Voltage VEBO:: - 7 V

Collector-Emitter Saturation Voltage:: - 150 mV

Maximum DC Collector Current:: - 1.5 A

Gain Bandwidth Product fT:: 100 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

DC Current Gain hFE Max:: 305

Packaging:: Reel

Brand:: Nexperia

Continuous Collector Current:: - 1 A

DC Collector/Base Gain hfe Min:: 190

Pd - Power Dissipation:: 1450 mW

Product Type:: BJTs - Bipolar Transistors

Qualification:: AEC-Q101

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Tags: PBSS511, PBSS51, PBSS5, PBSS, PBS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PBSS5112PAP,115 Description

***peria: PBSS5112PAP - 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

***et: Trans GP BJT PNP 120V 1A 6-Pin DFN T/R

***i-Key: TRANS DUAL PNP 120V 1A 6HUSON

***ark: TRANSISTOR, DUAL PNP, -120V, -1A, SOT-1118-6; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:100MHz; Power Dissipation Pd:2W; DC Collector Current:-1A; DC Current Gain hFE:15 ;RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANS, PNP/PNP, 120V, 1A, DFN2020-6; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:100MHz; Power Dissipation Pd:2W; DC Collector Current:-1A; DC Current Gain hFE:15hFE; Transistor Case Style:SOT-1118; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***nell: TRANSISTOR, PNP/PNP, 120V, 1A, DFN2020-6; Polarità Transistor:PNP Doppio; Tensione Collettore-Emettitore V(br)ceo:-120V; Frequenza di Transizione ft:100MHz; Dissipazione di Potenza Pd:2W; Corrente di Collettore CC:-1A; Guadagno di Corrente CC hFE:15hFE; Modello Case Transistor:SOT-1118; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C

PBSS5112PAP,115 More Information

Low VCEsat (BISS) Transistors: Nexperia Low VCEsat (BISS) Transistors offer a dual load switch using double RETs and double BISS transistors. Nexperia Low VCEsat (BISS) Transistors keep power consumption and heat dissipation to a minimum, delivering low power consumption and high collector current capability by utilizing innovative mesh-emitter technology.

Market price

Part #	Mfg.	Description	Stock	Price
PBSS5112PAP,115 DISTI # 1727-1077-1-ND	Nexperia	TRANS 2PNP 120V 1A 6HUSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1625In Stock	1000:$0.1888 500:$0.2443 100:$0.3109 10:$0.4160 1:$0.4900
PBSS5112PAP,115 DISTI # 1727-1077-6-ND	Nexperia	TRANS 2PNP 120V 1A 6HUSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1625In Stock	1000:$0.1888 500:$0.2443 100:$0.3109 10:$0.4160 1:$0.4900
PBSS5112PAP,115 DISTI # 1727-1077-2-ND	Nexperia	TRANS 2PNP 120V 1A 6HUSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1380 15000:$0.1455 6000:$0.1563 3000:$0.1671
PBSS5112PAP,115 DISTI # PBSS5112PAP,115	Nexperia	Trans GP BJT PNP 120V 1A 6-Pin DFN T/R - Tape and Reel (Alt: PBSS5112PAP,115) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.1279 12000:$0.1269 18000:$0.1239 30000:$0.1199 60000:$0.1179
PBSS5112PAP,115 DISTI # 771-PBSS5112PAP	Nexperia	Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor RoHS: Compliant	2230	1:$0.5800 10:$0.4750 100:$0.2890 1000:$0.2240 3000:$0.1910 9000:$0.1780 24000:$0.1690 45000:$0.1650
PBSS5112PAP	NXP Semiconductors	Small Signal Bipolar Transistor RoHS: Compliant	2216	1000:$0.1300 100:$0.1400 500:$0.1400 25:$0.1500 1:$0.1600
PBSS5112PAP115	NXP Semiconductors	Now Nexperia PBSS5112PAP - Small Signal Bipolar Transistor RoHS: Not Compliant	39000	1000:$0.1300 100:$0.1400 500:$0.1400 25:$0.1500 1:$0.1600
PBSS5112PAP,115 DISTI # 2291480	Nexperia	TRANS, PNP/PNP, 120V, 1A, DFN2020-6 RoHS: Compliant	0	5:£0.3620 25:£0.3410 100:£0.2190 250:£0.2030 500:£0.1870

Related products

Image	Part #	Description
	Mfr.#: ESP32-S0WD OMO.#: OMO-ESP32-S0WD	RF System on a Chip - SoC SMD IC ESP32-S0WD, Singal Core MCU, WiFi & Bluetooth
	Mfr.#: FDN5618P OMO.#: OMO-FDN5618P	MOSFET SSOT-3 P-CH 60V
	Mfr.#: PIC24FJ128GA705-I/M4 OMO.#: OMO-PIC24FJ128GA705-I-M4	16-bit Microcontrollers - MCU 16-bit, 16 MIPS, 128KB Flash,16KB RAM
	Mfr.#: ATTINY1616-MNR OMO.#: OMO-ATTINY1616-MNR	8-bit Microcontrollers - MCU 20MHZ QFN 85C GRN
	Mfr.#: ATSAMD51G19A-MU OMO.#: OMO-ATSAMD51G19A-MU	ARM Microcontrollers - MCU 120MHZ 512KB FLASH 4 8 QFN PKG 85C
	Mfr.#: UCC25630-3DDBR OMO.#: OMO-UCC25630-3DDBR	Switching Controllers LLC Resonant
	Mfr.#: ESP-WROOM-02 OMO.#: OMO-ESP-WROOM-02	WiFi Modules (802.11) SMD Module, ESP8266EX, 16Mbits SPI flash, UART Mode
	Mfr.#: ESP-WROOM-02 OMO.#: OMO-ESP-WROOM-02-ESPRESSIF-SYSTEMS	SMD MODULE, ESP8266EX, 16MBITS S
	Mfr.#: PIC24FJ128GA705-I/M4 OMO.#: OMO-PIC24FJ128GA705-I-M4-MICROCHIP-TECHNOLOGY	16-BIT, 16 MIPS, 128KB FLASH,
	Mfr.#: JMK105C6105MV-F OMO.#: OMO-JMK105C6105MV-F-TAIYO-YUDEN	CAP CER 1UF 6.3V X6S 0402

Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of PBSS5112PAP,115 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.58~~; ~~$0.58~~

10: ~~$0.48~~; ~~$4.75~~

100: ~~$0.29~~; ~~$28.90~~

1000: ~~$0.22~~; ~~$224.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

PBSS511 3
PBSS51 60
PBSS5 275
PBSS 914
PBS 1029

Newest Products

BSH205G2 20 V, P-Channel Trench MOSFET

Nexperia's P-channel, enhancement mode FET in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.
Compare PBSS5112PAP,115

PBSS5112PAP vs PBSS5112PAP115 vs PBSS5120T
40 V, 2 A, Low VCE(sat) (BISS) Transistors

Nexperia offers their low VCE(sat) breakthrough in small signal (BISS) transistors in a medium power SOT223 (SC-73) surface-mounted device (SMD) plastic package.
Common-Mode Filters with Integrated TrEOS ESD Prot

Nexperia's common-mode filters with Integrated TrEOS ESD protection are a great solution for EMI and ESD issues in high-speed data communications.
NextPowerS3 Power MOSFETs

Nexperia offers their NextPowerS3 technology, N-channel, low-voltage, high-current, fast switching logic-level MOSFETs.
60 V, Dual, N-Channel Trench MOSFET

Nexperia's dual, N-channel, enhancement-mode FET in a lead-free, ultra-small, DFN1010B-6 (SOT1216), SMD, plastic package using trench MOSFET technology.

More Newest Products

PBSS5112PAP,115

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes