PartNumber | PBSS5112PAP,115 | PBSS5112PAP115 | PBSS5112PAP |
Description | Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor | Now Nexperia PBSS5112PAP - Small Signal Bipolar Transistor, HUSON6 | Small Signal Bipolar Transisto |
Manufacturer | Nexperia | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | DFN-2020-6 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | - 120 V | - | - |
Collector Base Voltage VCBO | - 120 V | - | - |
Emitter Base Voltage VEBO | - 7 V | - | - |
Collector Emitter Saturation Voltage | - 150 mV | - | - |
Maximum DC Collector Current | - 1.5 A | - | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 305 | - | - |
Packaging | Reel | - | - |
Brand | Nexperia | - | - |
Continuous Collector Current | - 1 A | - | - |
DC Collector/Base Gain hfe Min | 190 | - | - |
Pd Power Dissipation | 1450 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |