IXTA80N10T Datasheet IXTP80N10T, IXTA80N10T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 100 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 100 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 80 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

220 A

I

A

T

C

= 25°C25A

E

AS

T

C

= 25°C 400 mJ

P

D

T

C

= 25°C 230 W

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 175°C 10 V/ns

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

DS99648A(11/09)

IXTA80N10T

IXTP80N10T

V

DSS

= 100V

I

D25

= 80A

R

DS(on)

≤≤

≤ 14m

ΩΩ

Ω

TrenchMV

TM

Power MOSFET

G = Gate D = Drain

S = Source Tab = Drain

TO-263 AA (IXTA)

G

D

S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 105 V

V

GS(th)

V

DS

= V

GS

, I

D

= 100μA 2.5 5.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= 105V, V

GS

= 0V 5 μA

T

J

= 150°C 150 μA

R

DS(on)

V

GS

= 10V, I

D

= 25A, Note 1 & 2 14 mΩ

Features

z

International Standard Packages

z

175°C Operating Temperature

z

Avalanche Rated

z

High Current Handling Capability

z

Fast Intrinsic Diode

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

Automotive

- Motor Drives

- DC/DC Conversion

- 42V Power Bus

- ABS Systems

z

DC/DC Converters and Off-Line UPS

z

Primary Switch for 24V and 48V

Systems

z

High Current Switching Applications

z

Distributed Power Architechtures

and VRMs

z

Electronic Valve Train Systems

IXTA80N10T

IXTP80N10T

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. On through-kole packages R

DS(on)

Kelvin test contact location

must be 5 mm or less from the package body.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 33 55 S

C

iss

3040 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 420 pF

C

rss

90 pF

t

d(on)

31 ns

t

r

54 ns

t

d(off)

40 ns

t

f

48 ns

Q

g(on)

60 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 25A 21 nC

Q

gd

15 nC

R

thJC

0.65 °C/W

R

thCS

0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 80 A

I

SM

Repetitive, Pulse Width Limited by T

JM

220 A

V

SD

I

F

= 25A, V

GS

= 0V, Note 1 1.1 V

t

rr

100 ns

I

F

= 25A, -di/dt = 100A/μs

V

R

= 50V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 10A

R

G

= 15Ω (External)

TO-220 (IXTP) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-263 (IXTA) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

1. Gate

2. Drain

3. Source

IXTA80N10T

IXTP80N10T

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

7V

8V

9V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

10

20

30

40

50

60

70

80

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

5V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 40A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 80A

I

D

= 40A

Fig. 5. R

DS(on)

Normalized to I

D

= 40A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

4.2

4.6

0 25 50 75 100 125 150 175 200 225 250

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

IXTA80N10T

IXTA80N10T

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