© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_80N10T(3V)12-11-07-A
IXTA80N10T
IXTP80N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
35
40
45
50
55
60
65
70
75
80
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 15 , V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
40
80
120
160
200
240
280
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
25
35
45
55
65
75
85
95
t
d
o n
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
39
40
41
42
43
44
45
46
47
48
49
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
36
40
44
48
52
56
60
64
68
72
76
t
d
o f f
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 15, V
GS
= 10V
V
DS
= 50V
I
D
= 10A
I
D
= 30A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
40
42
44
46
48
50
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f
- Nanoseconds
30
38
46
54
62
70
78
t
d
o f f
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 15, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 15
,
V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
80
100
120
140
160
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
30
70
110
150
190
230
270
t
d
o f f
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
