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STGF14N60D, STGP14N60D Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-220FP
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25 °C 25 11 A
I
C
(1)
Collector current (continuous) at T
C
= 100 °C 14 7 A
I
CL
(2)
2. Vclamp = 80% of V
CES
, T
j
=175 °C, R
G
=10 Ω, V
GE
=15 V
Turn-off latching current 50 A
I
CP
(3)
3. Pulse width limited by max. junction temperature allowed
Pulsed collector current 50 A
V
GE
Gate-emitter voltage ±20 V
I
F
Diode RMS forward current at T
C
= 25 °C 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms
sinusoidal
55 A
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external hea sink
( t=1 s; T
C
= 25 °C)
-- 2500 V
P
TOT
Total dissipation at T
C
= 25 °C
95 33 W
t
scw
Short circuit withstand time, V
CE
= 0.5V
(BR)CES
,
T
C
= 125 °C, R
G
= 10 Ω, V
GE
= 15 V
5µs
T
j
Operating junction temperature – 40 to 175 °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case IGBT max. 1.56 4.5 °C/W
R
thj-case
Thermal resistance junction-case diode max. 2.2 5.6 °C/W
R
thj-amb
Thermal resistance junction-ambient max. 62.5 °C/W
I
C
T
C
()
T
jmax()
T
C
–
R
thj c–
V
CE sat()max()
T
jmax()
I
C
T
C
(),()×
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