Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics STGF14N60D, STGP14N60D
4/11
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter breakdown
voltage (V
GE
= 0)
I
C
= 1 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 7 A
V
GE
= 15 V, I
C
= 7 A, T
C
= 125 °C
2.1
1.8
V
V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 250 µA 4.5 6.5 V
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20 V, T
C
= 125 °C ±100 nA
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
V
CE
= 600 V, T
C
= 125 °C
150
1
µA
mA
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
CE
= 15 V
,
I
C
= 7 A 3.2 S
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
TBD
TBD
TBD
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390 V, I
C
= 7 A,
V
GE
= 15 V
(see Figure 3)
TBD
TBD
TBD
nC
nC
nC
Obsolete Product(s) - Obsolete Product(s)
STGF14N60D, STGP14N60D Electrical characteristics
5/11
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390 V, I
C
= 7 A
R
G
= 10 , V
GE
= 15 V,
(see Figure 2)
TBD
TBD
TBD
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390 V, I
C
= 7 A
R
G
= 10 , V
GE
= 15 V,
T
C
= 125 °C
(see Figure 2)
TBD
TBD
TBD
ns
ns
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 7 A,
R
GE
= 10 , V
GE
= 15 V
(see Figure 2)
TBD
TBD
TBD
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 7 A,
R
GE
= 10 , V
GE
= 15 V
T
C
= 125 °C
(see Figure 2)
TBD
TBD
TBD
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min Typ. Max Unit
Eon
(1)
E
off
(2)
E
ts
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 7 A
R
G
= 10 , V
GE
= 15 V,
(see Figure 2)
TBD
TBD
TBD
µJ
µJ
µJ
Eon
(1)
E
off
(2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 7 A
R
G
= 10 , V
GE
= 15 V,
T
C
= 125 °C
(see Figure 2)
TBD
TBD
TBD
µJ
µJ
µJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min Typ. Max Unit
V
F
Forward on-voltage
I
F
= 7 A
I
F
= 7 A, T
C
= 125 °C
1.8
1.3
2.1 V
V
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 7 A, V
R
= 40 V,
di/dt = 100 A/µs
(see Figure 5)
37
40
2.1
ns
nC
A
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 7 A, V
R
= 40 V,
T
C
= 125 °C,
di/dt = 100 A/µs
(see Figure 5)
61
98
3.2
ns
nC
A
Obsolete Product(s) - Obsolete Product(s)
Test circuit STGF14N60D, STGP14N60D
6/11
3 Test circuit
Figure 2. Test circuit for inductive load
switching
Figure 3. Gate charge test circuit
Figure 4. Switching waveforms Figure 5. Diode recovery times waveform
AM01504v1 AM01505v1
AM01506v1
90%
10%
90%
10%
V
G
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
t
rr
ta
tb
Qrr
IRRM
t
V
F
di/dt

STGF14N60D

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT 600V 11A 33W TO220FP
Lifecycle:
New from this manufacturer.
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