2DD1664P

2DD1664P-13 vs 2DD1664P vs 2DD1664P-7

 
PartNumber2DD1664P-132DD1664P2DD1664P-7
DescriptionBipolar Transistors - BJT 1000W 32Vceo
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT280 MHz280 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DD162DD16-
Height1.5 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-1A-
Voltage Collector Emitter Breakdown Max-32V-
DC Current Gain hFE Min Ic Vce-82 @ 100mA, 3V-
Vce Saturation Max Ib Ic-400mV @ 50mA, 500mA-
Current Collector Cutoff Max-100nA-
Frequency Transition-280MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-32 V-
Collector Base Voltage VCBO-40 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-82-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DD1664P-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1664P-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1664P New and Original
2DD1664P-7 New and Original
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