2DD1664R

2DD1664R-13 vs 2DD1664R vs 2DD1664R-7

 
PartNumber2DD1664R-132DD1664R2DD1664R-7
DescriptionBipolar Transistors - BJT 1000W 32Vceo
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage400 mV--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT280 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2DD16--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min180 at 100 mA, 3 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DD1664R-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1664R-13 Bipolar Transistors - BJT 1000W 32Vceo
2DD1664R New and Original
2DD1664R-7 New and Original
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