PartNumber | 2N4126 | 2N4150 | 2N4126 TRE |
Description | Bipolar Transistors - BJT PNP Gen Pur SS | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT 25Vcbo 25Vceo 4.0Vebo 200mA 625mW |
Manufacturer | Central Semiconductor | Microchip | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-5-3 | TO-92-3 |
Transistor Polarity | PNP | NPN | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 25 V | 70 V | 25 V |
Collector Base Voltage VCBO | 25 V | 100 V | 25 V |
Emitter Base Voltage VEBO | 4 V | 10 V | 4 V |
Collector Emitter Saturation Voltage | 0.4 V | 600 mV | 0.4 V |
Maximum DC Collector Current | 0.2 A | 10 A | - |
Gain Bandwidth Product fT | 250 MHz | - | 250 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 200 C | + 150 C |
Series | 2N4126 | - | 2N4126E |
DC Current Gain hFE Max | 480 | 200 at 1 A, 5 VDC | 360 at 2 mA, 1 V |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Packaging | Bulk | Bulk | Reel |
Width | 4.19 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Central Semiconductor |
Continuous Collector Current | 0.2 A | - | 200 mA |
DC Collector/Base Gain hfe Min | 120 | 50 at 1 A, 5 VDC | 60 at 50 mA, 1 V |
Pd Power Dissipation | 625 mW | 1 W | 1.5 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 1 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N4126 PBFREE | - | 2N4126 PBFREE TRE |
Unit Weight | 0.016000 oz | - | - |
Technology | - | Si | Si |