PartNumber | 2N4264 | 2N4296 PBFREE | 2N4298 PBFREE |
Description | Bipolar Transistors - BJT NPN 30Vcbo 15Vceo 6.0Vebo 200mA | Bipolar Transistors - BJT NPN 350Vcbo 250V 4.0Vebo 1.0A 20W | Bipolar Transistors - BJT NPN 500Vcbo 350V 4.0Vebo 1.0A 20W |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-66-2 | TO-66-2 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 15 V | 250 V | 350 V |
Collector Base Voltage VCBO | 30 V | 350 V | 500 V |
Emitter Base Voltage VEBO | 6 V | 4 V | 4 V |
Collector Emitter Saturation Voltage | 0.35 V | 1.5 V | 1.5 V |
Gain Bandwidth Product fT | 350 MHz | 20 MHz | 20 MHz |
Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Packaging | Bulk | Tube | Tube |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 200 mA | 1 A | 1 A |
DC Collector/Base Gain hfe Min | 20 at 200 mA, 1 V | 50 at 50 mA, 10 V | 25 at 50 mA, 10 V |
Pd Power Dissipation | 625 mW | 20 W | 20 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 30 | 30 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N4264 PBFREE | - | - |
Unit Weight | 0.007266 oz | - | - |
Series | - | 2N42 | 2N42 |
DC Current Gain hFE Max | - | 150 at 50 mA, 10 V | 75 at 50 mA, 10 V |