2N4410

2N4410 vs 2N4410_D26Z vs 2N4410_D27Z

 
PartNumber2N44102N4410_D26Z2N4410_D27Z
DescriptionBipolar Transistors - BJT 120Vcbo 80Vceo 5.0Vebo 250mA 625mWTRANS NPN 80V 0.2A TO-92TRANS NPN 80V 0.2A TO-92
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO120 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage200 mV--
Maximum DC Collector Current10 mA--
Gain Bandwidth Product fT60 MHz--
Series2N4410--
Height5.33 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min60 at 10 mA, 1 V--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N4410 PBFREE--
Unit Weight0.015873 oz--
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
2N4410 Bipolar Transistors - BJT 120Vcbo 80Vceo 5.0Vebo 250mA 625mW
ON Semiconductor
ON Semiconductor
2N4410_D26Z TRANS NPN 80V 0.2A TO-92
2N4410 TRANS NPN 80V 0.2A TO-92
2N4410_D27Z TRANS NPN 80V 0.2A TO-92
2N4410_D74Z TRANS NPN 80V 0.2A TO-92
2N4410_D75Z TRANS NPN 80V 0.2A TO-92
2N4410_NL New and Original
2N4410RLRA New and Original
Top