PartNumber | 2SA1943N(S1,E,S) | 2SA1943N | 2SA1943N(S1,X,S) |
Description | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ | ||
Manufacturer | Toshiba | TOS | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-3P-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 230 V | - | - |
Collector Base Voltage VCBO | - 230 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 1.1 V | - | - |
Maximum DC Collector Current | - 15 A | - | - |
Gain Bandwidth Product fT | 30 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SA1943N | - | - |
DC Current Gain hFE Max | 160 | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | - 15 A | - | - |
DC Collector/Base Gain hfe Min | 35 | - | - |
Pd Power Dissipation | 150 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.246918 oz | - | - |