PartNumber | 2SB1132T100P | 2SB1132T100Q | 2SB1132T100-Q |
Description | Bipolar Transistors - BJT DVR PNP 32V 1A | Bipolar Transistors - BJT PNP 32V 1A SO-89 | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | MPT-3 | - | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | - 32 V | - 32 V | - |
Collector Base Voltage VCBO | - 40 V | - 40 V | - |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
Collector Emitter Saturation Voltage | - 0.2 V | - | - |
Maximum DC Collector Current | - 1 A | 1 A | - |
Gain Bandwidth Product fT | 150 MHz | 150 MHz | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | 2SB1132 | 2SB1132 | - |
DC Current Gain hFE Max | 390 | 390 | - |
Height | 1.5 mm | 1.5 mm | - |
Length | 4.5 mm | 4.5 mm | - |
Packaging | Reel | Reel | - |
Width | 2.5 mm | 2.5 mm | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Continuous Collector Current | - 1 A | - 1 A | - |
DC Collector/Base Gain hfe Min | 120 | 82 | - |
Pd Power Dissipation | 2 W | 500 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Minimum Operating Temperature | - | - 55 C | - |
Unit Weight | - | 0.004603 oz | - |