 |  | |
| PartNumber | 2SC3326-B,LF | 2SC3326-B,LF(T |
| Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | |
| Manufacturer | Toshiba | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-236-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 20 V | - |
| Collector Base Voltage VCBO | 50 V | - |
| Emitter Base Voltage VEBO | 25 V | - |
| Collector Emitter Saturation Voltage | 42 mV | - |
| Maximum DC Collector Current | 300 mA | - |
| Gain Bandwidth Product fT | 30 MHz | - |
| Maximum Operating Temperature | + 125 C | - |
| Series | 2SC3326 | - |
| DC Current Gain hFE Max | 1200 | - |
| Packaging | Reel | - |
| Brand | Toshiba | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 150 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.000423 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SC3326-B,LF | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | |
| 2SC3326-B,LF(T | New and Original | ||
| 2SC3326-B,LF | TRANS NPN 20V 0.3A S-MINI |