2SD1815S-T

2SD1815S-TL-E vs 2SD1815S-TL-H vs 2SD1815S-TL

 
PartNumber2SD1815S-TL-E2SD1815S-TL-H2SD1815S-TL
DescriptionBipolar Transistors - BJT BIP NPN 3A 100VBipolar Transistors - BJT BIP NPN 3A 100V
ManufacturerON SemiconductorON SemiconductorSNAYO
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RFTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTThrough Hole-
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO120 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage150 mV--
Maximum DC Collector Current6 A--
Gain Bandwidth Product fT180 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SD18152SD1815-
DC Current Gain hFE Max400--
PackagingReelReel-
BrandON Semiconductor--
DC Collector/Base Gain hfe Min140--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity700--
SubcategoryTransistors--
Unit Weight0.009929 oz0.063493 oz-
Package Case-TO-252-
Pd Power Dissipation-1 W-
Collector Emitter Voltage VCEO Max-100 V-
Emitter Base Voltage VEBO-6 V-
Continuous Collector Current-3 A-
DC Collector Base Gain hfe Min-70-
Manufacturer Part # Description RFQ
2SD1815S-TL-E Bipolar Transistors - BJT BIP NPN 3A 100V
2SD1815S-TL New and Original
ON Semiconductor
ON Semiconductor
2SD1815S-TL-H Bipolar Transistors - BJT BIP NPN 3A 100V
2SD1815S-TL-E Bipolar Transistors - BJT BIP NPN 3A 100V
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