PartNumber | 2SD1816S-H | 2SD1816S-TL-E | 2SD1816S-E |
Description | Bipolar Transistors - BJT BIP NPN 4A 100V | Bipolar Transistors - BJT HF LOW-NOISE AMPLIFIER | Bipolar Transistors - BJT BIP NPN 4A 100V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | - | - |
Package / Case | TO-251-3 | - | - |
Transistor Polarity | NPN | NPN | NPN |
Collector Emitter Voltage VCEO Max | 100 V | 100 V | 100 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Series | 2SD1816 | 2SD1816 | 2SD1816 |
Packaging | Bulk | Reel | Bulk |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 4 A | - | - |
DC Collector/Base Gain hfe Min | 70 | - | - |
Pd Power Dissipation | 1 W | 20 W | 20 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 700 | 500 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.139332 oz | - | - |
Configuration | - | Single | Single |
Maximum DC Collector Current | - | 4 A | 4 A |
Gain Bandwidth Product fT | - | 130 MHz | 130 MHz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Height | - | 2.3 mm | 2.3 mm |
Width | - | 6.5 mm | 6.5 mm |