PartNumber | A3T21H450W23SR6 | A3T21H360W23SR6 | A3T21H400W23SR6 |
Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | Dual N-Channel | Dual N-Channel | Dual N-Channel |
Technology | Si | Si | Si |
Id Continuous Drain Current | 3.6 A | 2.4 A | 3.2 A |
Vds Drain Source Breakdown Voltage | - 500 mV, 65 V | - 500 mV, 65 V | - 500 mV, 65 V |
Gain | 15.4 dB | 16.4 dB | - |
Output Power | 87 W | 56 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | ACP-1230S-4L2S | ACP-1230S-4L2S | ACP-1230S-4 |
Packaging | Reel | Reel | Reel |
Operating Frequency | 2110 MHz to 2200 MHz | 2110 MHz to 2200 MHz | 2110 MHz to 2200 MHz |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 150 | 150 | 150 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 10 V | - 6 V, 10 V | - 6 V, 10 V |
Vgs th Gate Source Threshold Voltage | 1.4 V | 1.4 V | 0.8 V, 1.4 V |
Part # Aliases | 935352756128 | 935354511128 | 935372908128 |
Unit Weight | 0.212803 oz | 0.212656 oz | - |
Series | - | - | A3T21H400W23 |