PartNumber | AIGW50N65F5XKSA1 | AIGW50N65H5XKSA1 |
Description | IGBT Transistors DISCRETES | IGBT Transistors DISCRETES |
Manufacturer | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.66 V | 1.66 V |
Maximum Gate Emitter Voltage | 30 V | 30 V |
Continuous Collector Current at 25 C | 80 A | 80 A |
Pd Power Dissipation | 270 W | 270 W |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Series | TRENCHSTOP 5 F5 | TRENCHSTOP 5 H5 |
Packaging | Tube | Tube |
Brand | Infineon Technologies | Infineon Technologies |
Gate Emitter Leakage Current | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 240 | 240 |
Subcategory | IGBTs | IGBTs |
Tradename | TRENCHSTOP | TRENCHSTOP |
Part # Aliases | AIGW50N65F5 SP001346882 | AIGW50N65H5 SP001346878 |
Unit Weight | 0.211644 oz | 0.211644 oz |