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AIGW50N65H5XKSA1

AIGW50N65H5XKSA1
Mfr. #:
AIGW50N65H5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors DISCRETES
Lifecycle:
New from this manufacturer.
Datasheet:
AIGW50N65H5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
AIGW50N65H5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.66 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
270 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 H5
Packaging:
Tube
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
AIGW50N65H5 SP001346878
Unit Weight:
0.211644 oz
Tags
AIGW5, AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes |Infineon AIGW50N65H5XKSA1
***nell
IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Part # Mfg. Description Stock Price
AIGW50N65H5XKSA1
DISTI # AIGW50N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V TO247-3
Min Qty: 1
Container: Tube		240In Stock
  • 1000:$3.6641
  • 500:$4.2069
  • 100:$4.8312
  • 10:$5.8350
  • 1:$6.4600
AIGW50N65H5XKSA1
DISTI # AIGW50N65H5XKSA1		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW50N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.2845
  • 1440:$3.3440
  • 960:$3.4604
  • 480:$3.5901
  • 240:$3.7246
AIGW50N65H5XKSA1
DISTI # 93AC6943		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247 ROHS COMPLIANT: YES
RoHS: Compliant		240
  • 500:$3.2000
  • 250:$3.5100
  • 100:$3.6800
  • 50:$3.9600
  • 25:$4.2400
  • 10:$4.4400
  • 1:$4.9100
AIGW50N65H5XKSA1
DISTI # 726-AIGW50N65H5XKSA1		Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant		204
  • 1:$6.1400
  • 10:$5.5500
  • 25:$5.3000
  • 100:$4.6000
  • 250:$4.3900
  • 500:$4.0000
AIGW50N65H5XKSA1
DISTI # 2986331		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant		240
  • 1000:£3.0100
  • 500:£3.1000
  • 250:£3.4000
  • 100:£3.5600
  • 10:£4.1200
  • 1:£5.2400
AIGW50N65H5XKSA1
DISTI # 2986331		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant		240
  • 500:$5.7300
  • 250:$6.2900
  • 100:$6.5900
  • 25:$7.6000
  • 10:$7.9500
  • 1:$8.7900
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Availability
Stock:
234
On Order:
2217
Enter Quantity:
Current price of AIGW50N65H5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.14
$6.14
10
$5.55
$55.50
25
$5.30
$132.50
100
$4.60
$460.00
250
$4.39
$1 097.50
500
$4.00
$2 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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