PartNumber | APTCV60HM45BC20T3G | APTCV50H60T3G | APTCV40H60CT1G |
Description | Discrete Semiconductor Modules Power Module - Coolmos | IGBT Modules DOR CC3133 | IGBT Modules DOR CC8004 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | Discrete Semiconductor Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Product | - | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | - | Full Bridge | Full Bridge |
Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
Collector Emitter Saturation Voltage | - | 1.5 V | 1.5 V |
Continuous Collector Current at 25 C | - | 80 A | 80 A |
Gate Emitter Leakage Current | - | 600 nA | 600 nA |
Pd Power Dissipation | - | 176 W | 176 W |
Package / Case | - | SP3-32 | SP1-12 |
Minimum Operating Temperature | - | - 40 C | - 40 C |
Maximum Operating Temperature | - | + 100 C | + 100 C |
Mounting Style | - | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | - | 20 V | 20 V |
Unit Weight | - | - | 2.821917 oz |