APTCV40H60CT1G

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Configuration:

Full Bridge

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

1.5 V

Continuous Collector Current at 25 C:

80 A

Gate-Emitter Leakage Current:

600 nA

Pd - Power Dissipation:

176 W

Package / Case:

SP1-12

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 100 C

Packaging:

Tube

Brand:

Microchip / Microsemi

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

1

Subcategory:

IGBTs

Unit Weight:

2.821917 oz

Tags

APTCV, APTC, APT