APTGF200

APTGF200A120D3G vs APTGF200U120DG vs APTGF200SK120G

 
PartNumberAPTGF200A120D3GAPTGF200U120DGAPTGF200SK120G
DescriptionIGBT Modules Power Module - IGBTPOWER IGBT TRANSISTOR
ManufacturerMicrochip--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.2 V--
Continuous Collector Current at 25 C300 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1.4 kW--
Package / CaseD3-11--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
BrandMicrochip / Microsemi--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity50--
SubcategoryIGBTs--
Manufacturer Part # Description RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGF200A120D3G IGBT Modules Power Module - IGBT
APTGF200U120DG POWER IGBT TRANSISTOR
APTGF200SK120G New and Original
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