 | | | |
| PartNumber | APTGT100DH120TG | APTGT100DH60T3G | APTGT100DH170G |
| Description | IGBT Modules DOR CC4080 | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.5 V | 2 V |
| Continuous Collector Current at 25 C | 140 A | 150 A | 150 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 500 nA |
| Pd Power Dissipation | 480 W | 340 W | 560 W |
| Package / Case | SP4 | SP3-32 | SP6 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | - | 3.880136 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT100DH60TG | IGBT Modules DOR CC4084 | |
| APTGT100DH120TG | IGBT Modules DOR CC4080 | ||
| APTGT100DH60T3G | IGBT Modules Power Module - IGBT | ||
| APTGT100DH170G | IGBT Modules Power Module - IGBT | ||
| APTGT100DH60TG | IGBT MOD TRENCH ASYM BRIDGE SP4 |