BCY58-V

BCY58-VIII vs BCY58-VII

 
PartNumberBCY58-VIIIBCY58-VII
DescriptionBipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1WBipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
ManufacturerCentral SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-18TO-18
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max32 V32 V
Collector Base Voltage VCBO32 V32 V
Emitter Base Voltage VEBO7 V7 V
Collector Emitter Saturation Voltage0.7 V0.7 V
Maximum DC Collector Current200 mA200 mA
Gain Bandwidth Product fT150 MHz150 MHz
Minimum Operating Temperature- 65 C- 65 C
Maximum Operating Temperature+ 200 C+ 200 C
PackagingBulkBulk
BrandCentral SemiconductorCentral Semiconductor
Continuous Collector Current100 mA100 mA
DC Collector/Base Gain hfe Min20 At 10 uA , 5 V40 At 100 mA, 1 V
Pd Power Dissipation340 mW340 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity20002000
SubcategoryTransistorsTransistors
Part # AliasesBCY58-VIII PBFREEBCY58-VII PBFREE
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
BCY58-VIII Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
BCY58-VII Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
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