PartNumber | BFR840L3RHESD | BFR840L3RHESD E6327 | BFR840L3RHESDE6327 |
Description | |||
Manufacturer | - | - | INFINEON |
Product Category | - | - | Transistors - Bipolar (BJT) - RF |
Series | - | - | BFR840L3 |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Part Aliases | - | - | 840L3RHESD BFR BFR840L3RHESDE6327XT E6327 SP000978848 |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | SC-101, SOT-883 |
Technology | - | - | SiGe |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | TSLP-3-9 |
Configuration | - | - | Single |
Power Max | - | - | 75mW |
Transistor Type | - | - | NPN |
Current Collector Ic Max | - | - | 35mA |
Voltage Collector Emitter Breakdown Max | - | - | 2.6V |
DC Current Gain hFE Min Ic Vce | - | - | 150 @ 10mA, 1.8V |
Frequency Transition | - | - | 75GHz |
Noise Figure dB Typ f | - | - | 0.5dB @ 450MHz |
Gain | - | - | 27dB |
Pd Power Dissipation | - | - | 75 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Operating Frequency | - | - | 75 GHz |
Collector Emitter Voltage VCEO Max | - | - | 2.25 V |
Emitter Base Voltage VEBO | - | - | 2.9 V |
Continuous Collector Current | - | - | 35 mA |