BFR840L3RHESDE6327XTSA1

Mfr. #:: BFR840L3RHESDE6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:: New from this manufacturer.
Datasheet:: BFR840L3RHESDE6327XTSA1 Datasheet
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More Information:: BFR840L3RHESDE6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFR840L3

Transistor Type:: Bipolar

Technology:: SiGe

Collector- Emitter Voltage VCEO Max:: 2.25 V

Emitter- Base Voltage VEBO:: 2.9 V

Continuous Collector Current:: 35 mA

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Configuration:: Single

Mounting Style:: SMD/SMT

Package / Case:: TSLP-3

Packaging:: Reel

Operating Frequency:: 75 GHz

Type:: RF Silicon Germanium

Brand:: Infineon Technologies

Pd - Power Dissipation:: 75 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 15000

Subcategory:: Transistors

Part # Aliases:: 840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848

Tags: BFR840L3RHESDE, BFR840, BFR84, BFR8, BFR

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BFR840L3RHESDE6327XTSA1 Description

***nsix Microsemi: RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon Germanium, NPN

***ment14 APAC: RF Transistor, NPN, 2.25V, 75GHZ, TSLP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.25V; Transition Frequency ft:75GHz; Power

***ineon SCT: The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications, TSLP-3-9, RoHS

***nell: RF TRANSISTOR, NPN, 2.25V, 75GHZ, TSLP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.25V; Transition Frequency ft: 75GHz; Power Dissipation Pd: 75mW; DC Collector Current: 35mA; DC Current Gain hFE: 150hFE; RF Transistor Case: TSLP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules. | Summary of Features: Robust ultra low noise amplifier based on Infineons reliable high volume SiGe:C bipolar technology; Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness; Very high transition frequency fT = 75 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA; High gain |S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA; Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor); Low power consumption, ideal for mobile applications; Pb free (RoHS compliant) and halogen free very small thin leadless package (package height 0.31 mm, ideal for modules) | Target Applications: Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB; Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass); and C-band LNB (1st and 2nd stage LNA); Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer); Ka-band oscillators (DROs)

***ark: Trans Gp Bjt Npn 2.8V 0.04A 4-Pin(3+Tab) So T/R Rohs Compliant: Yes |Nxp BFU725F/N1,115

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Silicon Germanium, NPN

***enic: 2.8V 136mW 25mA 280@10mA,2V 55GHz NPN +150¡æ@(Tj) SOT-343 Bipolar Transistors - BJT ROHS

***ure Electronics: BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 55GHz; Power Dissipation Pd: 136mW; DC Collector Current: 25mA; DC Current Gain hFE: 160hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 55GHz; Power Dissipation Pd: 197mW; DC Collector Current: 5mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: BFU730LX Series 3 V 30 mA NPN Wideband Silicon Germanium RF Transistor - SOT-883

***icontronic: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon, NPN

***ical: Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R

***nell: RF TRANSISTOR, NPN, 3V, 53GHZ, SOT883C; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 3V; Transition Frequency ft: 53GHz; Power Dissipation Pd: 160mW; DC Collector Current: 30mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-883C; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***i-Key: TRANS NPN 3.5V 35MA 3SSFP

***nell: TRANS, NPN, 3.5V, 0.035A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:3.5V; Typ Gain Bandwidth ft:21GHz; Power Dissipation Pd:120mW; DC Collector Current:35mA; DC Current Gain hFE:160; Transistor Case Style:SC-81; No. of Pins:3

***ical: Trans GP BJT NPN 3.5V 0.035A 4-Pin(3+Tab) MCP T/R

***i-Key: TRANS NPN 3.5V 35MA MCP4

*** International: 2SC6023-TR-E SANYO

***nell: TRANS, NPN, 3.5V, 0.035A, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:3.5V; Typ Gain Bandwidth ft:22GHz; Power Dissipation Pd:120mW; DC Collector Current:35mA; DC Current Gain hFE:160; Transistor Case Style:SOT-343; No. of Pins:4

***ure Electronics: DTC144EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:-; No. Of Pins:3 Pin Rohs Compliant: Yes

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC144E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 68hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 68; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

BFR840L3RHESDE6327XTSA1 More Information

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Infineon Drone/Multicopter Solutions: Infineon Drone/Multicopter Solutions offer a portfolio of high-quality products with a wide spectrum of components. These cost-effective system solutions feature everything from power electronics to controllers and sensors. Design a highly efficient multicopter with an excellent user experience capable of light weight, longer flying times, better safety and reliability.Learn More

BFPx4 RF Transistors: Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

Part #	Mfg.	Description	Stock	Price
BFR840L3RHESDE6327XTSA1 DISTI # V36:1790_06391077	Infineon Technologies AG	Trans RF BJT 2.25V 0.035A Automotive 3-Pin TSLP T/R RoHS: Compliant	0
BFR840L3RHESDE6327XTSA1 DISTI # BFR840L3RHESDE6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 75GHZ TSLP-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4223In Stock	1000:$0.2413 500:$0.3016 100:$0.3815 10:$0.4980 1:$0.5700
BFR840L3RHESDE6327XTSA1 DISTI # BFR840L3RHESDE6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 75GHZ TSLP-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4223In Stock	1000:$0.2413 500:$0.3016 100:$0.3815 10:$0.4980 1:$0.5700
BFR840L3RHESDE6327XTSA1 DISTI # BFR840L3RHESDE6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 2.6V 75GHZ TSLP-3 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1874 15000:$0.1976
BFR840L3RHESDE6327XTSA1 DISTI # SP000978848	Infineon Technologies AG	Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R (Alt: SP000978848) RoHS: Compliant Min Qty: 15000 Container: Tape and Reel	Europe - 90	15000:€0.2719 30000:€0.2219 60000:€0.2039 90000:€0.1879 150000:€0.1749
BFR840L3RHESDE6327XTSA1 DISTI # BFR840L3RHESDE6327XTSA1	Infineon Technologies AG	Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R - Tape and Reel (Alt: BFR840L3RHESDE6327XTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel	Americas - 0	15000:$0.2099 30000:$0.2029 60000:$0.1949 90000:$0.1889 150000:$0.1859
BFR840L3RHESDE6327XTSA1 DISTI # BFR840L3RHESDE6327XTSA1	Infineon Technologies AG	Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R - Bulk (Alt: BFR840L3RHESDE6327XTSA1) RoHS: Compliant Min Qty: 1924 Container: Bulk	Americas - 0	1786:$0.1869 1788:$0.1799 3574:$0.1739 8930:$0.1679 17860:$0.1649
BFR840L3RHESDE6327XTSA1 DISTI # 50Y1772	Infineon Technologies AG	Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R - Product that comes on tape, but is not reeled (Alt: 50Y1772) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0
BFR840L3RHESDE6327XTSA1 DISTI # 50Y1772	Infineon Technologies AG	Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150 RoHS Compliant: Yes	214	1000:$0.2510 500:$0.2760 250:$0.3010 100:$0.3260 50:$0.3960 25:$0.4650 10:$0.5340 1:$0.6360
BFR840L3RHESDE6327XTSA1 DISTI # 726-BFR840L3RHESDE63	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	573	1:$0.6300 10:$0.5290 100:$0.3230 1000:$0.2490 2500:$0.2130 10000:$0.1980 15000:$0.1880
BFR 840L3RHESD E6327 DISTI # 726-BFR840L3RHESDE	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	0	15000:$0.1880
BFR840L3RHESDE6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon Germanium, NPN RoHS: Compliant	12200	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFR840L3RHESDE6327XTSA1 DISTI # 2480687	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 75GHZ, TSLP RoHS: Compliant	1718	500:£0.2390 250:£0.2440 100:£0.2480 25:£0.4050 5:£0.4340
BFR840L3RHESDE6327XTSA1 DISTI # 2480687RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 75GHZ, TSLP RoHS: Compliant	0	1000:$0.3590 500:$0.4480 100:$0.5670 10:$0.7400 1:$0.8500
BFR840L3RHESDE6327XTSA1 DISTI # 2480687	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 75GHZ, TSLP RoHS: Compliant	154	1000:$0.3590 500:$0.4480 100:$0.5670 10:$0.7400 1:$0.8500

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BFR840L3RHESDE6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes