 |  | | |
| PartNumber | BFU660F,115 | BFU660F | BFU660F115 |
| Description | RF Bipolar Transistors Single NPN 21GHz | RF Small Signal Bipolar Transistor 0.06A I(C) Single, X Band, Silicon, NPN | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 90 | - | - |
| Collector Emitter Voltage VCEO Max | 5.5 V | - | - |
| Emitter Base Voltage VEBO | 2.5 V | - | - |
| Continuous Collector Current | 30 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343F | - | - |
| Packaging | Reel | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 21 GHz | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934064611115 | - | - |
| Unit Weight | 0.000235 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU660F,115 | RF Bipolar Transistors Single NPN 21GHz | |
| BFU660F | New and Original | ||
| BFU660F115 | RF Small Signal Bipolar Transistor 0.06A I(C) Single, X Band, Silicon, NPN | ||
| BFU660F,115 | RF Bipolar Transistors Single NPN 21GHz |